LITHIUM-LITHIUM TETRACHLOROALUMINATE REFERENCE ELECTRODE IN THIONYL CHLORIDE.AVIGAL Y; PELED E.1977; J. ELECTROANAL. CHEM. INTERFACIAL ELECTROCHEM.; NETHERL.; DA. 1977; VOL. 76; NO 1; PP. 135-138; BIBL. 4 REF.Article

HOLLOW WHISKERS OF SILICON GROWN BY PYROLYSIS OF ALKYL-SILICON COMPOUNDS ON POLYCRYSTALLINE QUARTZ SUBSTRATES.AVIGAL Y; SCHIEBER M.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 26; NO 1; PP. 157-161; BIBL. 3 REF.Article

CONDUCTIVITY OF REDUCED SOLID SOLUTIONS IN THE SYSTEM NA₂O-AL₂O₃-TIO₂AVIGAL Y; BANKS E.1980; MATER. RES. BULL.; ISSN 0025-5408; USA; DA. 1980; VOL. 15; NO 10; PP. 1381-1383; BIBL. 4 REF.Article

LOW CARBON CONTAMINATION OF EPITAXIAL GERMANIUM FILMS PRODUCED BY PYROLYSIS OF ALKYL GERMANIUM COMPOUNDS.AVIGAL Y; ITZHAK D; SCHIEBER M et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 9; PP. 1226-1229; BIBL. 21 REF.Article

A NEW METHOD FOR CHEMICAL VAPOR DEPOSITION OF SILICON DIOXIDEAVIGAL Y; BEINGLASS I; SCHIEBER M et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 8; PP. 1103-1107; BIBL. 11 REF.Article

NEW SOLID ELECTROLYTES BASED ON CUBIC ZRP₂O₇SACKS R; AVIGAL Y; BANKS E et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 4; PP. 726-729; BIBL. 12 REF.Article

Correlation between electrical and compositional properties of SiO₂-InSb interfacesAVIGAL, Y; BREGMAN, J; SHAPIRA, Y et al.Journal of applied physics. 1988, Vol 63, Num 2, pp 430-434, issn 0021-8979Article

PHOTOELECTROCHEMISTRY OF HYDROGENATED AMORPHOUS SILICON (A-SI:H)AVIGAL Y; CAHEN D; HODES G et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 5; PP. 1209-1211; BIBL. 14 REF.Article

Correlation between electrical and compositional properties of SiO₂-InSb interfacesAVIGAL, Y; BREGMAN, J; SHAPIRA, Y et al.Journal of applied physics. 1988, Vol 63, Num 2, pp 430-434, issn 0021-8979Article

The nature of ion-implanted contacts to polycrystalline diamond filmsAVIGAL, Y; RICHTER, V; FIZGEER, B et al.Diamond and related materials. 2004, Vol 13, Num 9, pp 1674-1679, issn 0925-9635, 6 p.Article

Electron emission from diamond induced by atomic and molecular ionsKALISH, R; CHEIFETZ, E; RICHTER, V et al.Diamond and related materials. 2003, Vol 12, Num 10-11, pp 1685-1690, issn 0925-9635, 6 p.Article

Structural, optical and electrical properties of nanodiamond films deposited by HFCVD on borosilicate glass, fused silica and silicon at low temperatureREMES, Z; AVIGAL, Y; KALISH, R et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 11, pp 2499-2502, issn 0031-8965, 4 p.Conference Paper

Temporal response of CVD diamond detectors to modulated low energy X-ray beamsCONTE, G; ROSSI, M. C; SALVATORI, S et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 2, pp 249-252, issn 0031-8965, 4 p.Conference Paper

Fast and slow decay of ion beam induced electron emission in boron doped hydrogenated CVD diamond filmsRICHTER, V; AVIGAL, Y.Thin solid films. 2004, Vol 447-48, pp 158-162, issn 0040-6090, 5 p.Conference Paper

Enhancement of diamond CVD nucleation on quartz by high dose titanium implantationHOFFMAN, A; BRENER, R; LAIKHTMAN, A et al.Diamond and related materials. 1995, Vol 4, Num 5-6, pp 765-769, issn 0925-9635Conference Paper

Photo-hall effect measurements in P, N and B-doped diamond at low temperaturesREMES, Z; UZAN-SAGUY, C; BASKIN, E et al.Diamond and related materials. 2004, Vol 13, Num 4-8, pp 713-717, issn 0925-9635, 5 p.Conference Paper

Diffusion of hydrogen in undoped, p-type and n-type doped diamondsSAGUY, C; CYTERMANN, C; FIZGEE, B et al.Diamond and related materials. 2003, Vol 12, Num 3-7, pp 623-631, issn 0925-9635, 9 p.Conference Paper

Diffusion of hydrogen from a microwave plasma into diamond and its interaction with dopants and defectsUZAN-SAGUY, C; CYTERMANN, C; FIZGEER, B et al.Diamond and related materials. 2002, Vol 11, Num 3-6, pp 316-322, issn 0925-9635Conference Paper